Statistical 3D ‘atomistic’ simulation of decanano MOSFETs
نویسندگان
چکیده
منابع مشابه
Statistical 3D ‘atomistic’ simulation of decanano MOSFETs
A 3D statistical ‘atomistic’ simulation technique has been developed to study the effect of the random dopant induced parameter fluctuations in aggressively scaled MOSFETs. Efficient implementation of the ‘atomistic’ simulation approach has been used to investigate the threshold voltage standard deviation and lowering in the case of uniformly doped MOSFETs, and in fluctuation-resistant architec...
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Parameter uctuations found in ultrasmall devices are generally associated with discrete random dopants in semiconductors [1,2]. However, dopants are not the only source of intrinsic uctuations in device characteristics that can impede the traditional scaling approach in sub-100 nm MOSFETs. Other stochastic effects, such as oxide thickness uctuations, can also contribute to variations [3]. Line ...
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We study the effect of trapping/detrapping of a single-electron in interface states in the channel of n-type MOSFETs with decanano dimensions using 3D atomistic simulation techniques. In order to highlight the basic dependencies, the simulations are carried out initially assuming continuous doping charge, and discrete localized charge only for the trapped electron. The dependence of the random ...
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In this paper we use 3D simulations to study the amplitudes of random telegraph signals (RTS) associated with the trapping of a single carrier in interface states in the channel of sub 100 nm (decanano) MOSFETs. Both simulations using continuous doping charge and random discrete dopants in the active region of the MOSFETs are presented. We have studied the dependence of the RTS amplitudes on th...
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ژورنال
عنوان ژورنال: Superlattices and Microstructures
سال: 2000
ISSN: 0749-6036
DOI: 10.1006/spmi.1999.0805